* If the product has intellectual property rights, a license granted is must or contact us.
basic_info |
|
Product_Name: | 砷化镓 |
CAS: | 1303-00-0 |
中文同义词: | 砷化镓 |
EnglishSynonyms: | GALLIUM ARSENIDE |
pro_mdlNumber: | MFCD00011017 |
pro_acceptors: | 0 |
pro_donors: | 0 |
pro_smile: | [Ga]#[As] |
InChi: | InChI=1S/As.Ga |
InChiKey: | InChIKey=JBRZTFJDHDCESZ-UHFFFAOYSA-N |
property |
|
MeltingPoint: | 1238° |
Boiling_Point: | MP: 1238 DEG C |
Density: | DENSITY: 5.31 G/ML AT 25 DEG C(LIT) |
PhysicalProperty: | RESISTIVITY: =>1E7 OMEGA-CM |
Comments: | DIAMETER X THICKNESS: 2 IN X 0.5 MM FORM: SINGLE CRYSTAL SUBSTRATE PHYSICAL FORM: CUBIC (A = 5.6533 ANGSTROM) PHYSICAL PROPERTIES: MOBILITY =>4500 CM2.V-1.S-1 PHYSICAL PROPERTIES: UNDOPED (SI-TYPE SEMICONDUCTOR), EPD < 5 X 104 CM-2, GROWTH TECHNIQUE = LEC AND HB RIDADR: UN 1557 6.1/PG 2 SEMICONDUCTOR PROPERTIES: 100 UNSPSC: 12352300 WGK: 3 |
secure_info |
|
secure_symbol: | GHS06 GHS09 |
secure_signal_word: | Danger |
secure_risk_stmt: | H301,H331,H410 |
secure_cautionary_stmt: | P261,P273,P301+P310,P311,P501 |
secure_damage_code: | T,N |
secure_risk_disclosure_stmt: | R:R23/25;R50/53 |
secure_security_stmt: | S:S20/21;S28;S45;S60;S61 |
secure_wgk_germany: | 3 |
* If the product has intellectual property rights, a license granted is must or contact us.