* If the product has intellectual property rights, a license granted is must or contact us.
基本信息 |
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产品名称: | 锗烷 |
CAS: | 7782-65-2 |
中文同义词: | 锗烷 |
英文同义词: | GERMANE |
MDL号: | MFCD00011028 |
氢键受体数量: | 0 |
氢键供体数量: | 0 |
Smile: | [GeH4] |
InChi: | InChI=1S/GeH4/h1H4 |
InChiKey: | InChIKey=QUZPNFFHZPRKJD-UHFFFAOYSA-N |
性质 |
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熔点: | -165 DEG C(LIT) |
沸点: | DENSITY: 1.53 |
密度: | vapor1.53(?142°C,vsair) |
物理性质: | TRANSITION TEMPERATURE: CRITICAL TEMPERATURE 35 DEG C VAPOR DENSITY: 1.53 (-142 DEG C, VS AIR) |
注解: | FEATURES AND BENEFITS: GERMANE GAS IS USED IN THE DEPOSITION OF EPITAXIAL AND AMORPHOUS SIGE ALLOY LAYERS USED IN THE PRODUCTION OF HIGH PERFORMANCE DEVICES INCLUDING PHOTOVOLTAIC CELLS AND INTEGRATED CIRCUITS (IC). PRECURSOR TO GERMANIUM-CONTAINING THIN FILMS BY CHEMICAL VAPOR DEPOSITION (CVD) AND MOLECULAR BEAM EPITAXY (MBE). A CVD PRECURSOR FOR GERMANIUM CARBIDE SEMICONDUCTING FILMS FORM: GAS IMPURITIES: <0.5 PPM OXYGEN (O2) IMPURITIES: <1 PPM CARBON MONOXIDE AND TRIGERMANE (CO AND GE3H8) IMPURITIES: <1 PPM THC IMPURITIES: <1 PPM WATER (H2O) IMPURITIES: <2 PPM CARBON DIOXIDE (CO2) IMPURITIES: <2 PPM NITROGEN (N2) IMPURITIES: <20 PPM DIGERMANE (GE2H6) IMPURITIES: <5 PPM CHLOROGERMANES IMPURITIES: <5 PPM GERMOXANES IMPURITIES: <50 PPM HYDROGEN (H2) RECOMMENDED PRODUCTS: STAINLESS STEEL REGULATORS Z527416 OR Z527424 ARE RECOMMENDED RIDADR: UN 2192 2.3 RTECS: LY4900000 UNSPSC: 12142100 WGK: 3 |
规格: | ELECTRONIC GRADE |
安全信息 |
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符号: | GHS02 GHS06 |
信号词: | Danger |
危险声明: | H220-H280-H302-H330 |
警示性声明: | P210-P260-P284-P310-P410 + P403 |
危害码: | F+,T+ |
风险声明: | R:12-17-22-26 |
安全声明: | S:16-24-26-36/37/39-45 |
WGK德国: | 3 |
* If the product has intellectual property rights, a license granted is must or contact us.