分子结构:
CCD编号:CCD00162216
GALLIUM N-BUTOXIDE
分子式:C12 H27 Ga O3
分子量:289.065
* If the product has intellectual property rights, a license granted is must or contact us.
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| 产品名称： | GALLIUM N-BUTOXIDE |
| 英文同义词： | GALLIUM TRI-N-BUTOXIDE ; GALLIUM N-BUTOXIDE |
| MDL号： | MFCD00792268 |
| 氢键受体数量： | 3 |
| 氢键供体数量： | 0 |
| Smile： | CCCCO[Ga](OCCCC)OCCCC |
| InChi： | InChI=1S/3C4H9O.Ga/c3*1-2-3-4-5;/h3*2-4H2,1H3;/q3*-1;+3 |
| InChiKey： | InChIKey=LVUZSDQWTJGSGC-UHFFFAOYSA-N |
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| 沸点： | BP 184 DEG C/6.65 PA |
| 注解： | SOLID |
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基本信息
* If the product has intellectual property rights, a license granted is must or contact us.
