* If the product has intellectual property rights, a license granted is must or contact us.
基本信息 |
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产品名称: | BIS(METHYL-ETA5-CYCLOPENTADIENYL)DIMETHYLHAFNIUM |
CAS: | 68193-43-1 |
英文同义词: | HFCMME ; BIS(METHYL-ETA5-CYCLOPENTADIENYL)DIMETHYLHAFNIUM ; HFD-CO2 |
MDL号: | MFCD16875684 |
氢键受体数量: | 0 |
氢键供体数量: | 0 |
Smile: | C[C]1[CH][CH][CH][CH]1.C[C]1[CH][CH][CH][CH]1.C[Hf]C |
InChi: | InChI=1S/2C6H7.2CH3.Hf/c2*1-6-4-2-3-5-6;;;/h2*2-5H,1H3;2*1H3; |
InChiKey: | InChIKey=BSTQZSKPQICLPX-UHFFFAOYSA-N |
性质 |
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熔点: | 60 DEG C(LIT) |
沸点: | 80-120 DEG C/0.3-0.5 MMHG(LIT) |
密度: | DENSITY: 1.60 G/ML+/-0.01 G/ML AT 25 DEG C |
注解: | APPLICATION: ADVANCED PRECURSOR FOR ATOMIC LAYER DEPOSITION OF HFO2 THIN FILMS. HAFNIUM AND ZIRCONIUM OXIDES ARE LEADING CANDIDATES TO REPLACE SILICION DIOXIDE AS THE GATE OXIDE IN A VARIETY OF SEMICONDUCTOR AND ENERGY APPLICATIONS. EXCELLENT PROPERTIES OF HFO2 AND ZRO2 FILMS MAKE THEM ESPECIALLY ATTRACTIVE FOR GATE OXIDE REPLACEMENT AND AS POTENTIAL INSULATING DIELECTRICS FOR CAPACITIVE ELEMENTS IN MEMORY DEVICES SUCH AS DRAM COLOR: WHITE FEATURES AND BENEFITS: COMPATIBLE WITH A VARIETY OF OXIDANTS IN ALD GROWTH PROCESSES ACROSS A WIDE TEMPERATURE RANGE EXHIBITING SELF LIMITING GROWTH UP TO 400 DEG C. PRECURSOR VOLATILITY AND THERMAL STABILITY PROPERTIES ENABLE EASY MATERIALS TRANSPORT FROM BUBBLERS INTO CONVENTIONAL DEPOSITION TOOLS FORM: WAXY SOLID FREQUENTLY ASKED QUESTIONS: LIVE CHAT AND FREQUENTLY ASKED QUESTIONS ARE AVAILABLE FOR THIS PRODUCT GENERAL DESCRIPTION: ATOMIC NUMBER OF BASE MATERIAL: 72 HAFNIUM PROTOCOLS AND APPLICATIONS: PRECURSORS PACKAGED FOR DEPOSITIONS SYSTEMS WGK: 3 |
安全信息 |
* If the product has intellectual property rights, a license granted is must or contact us.