basic_info |
|
| Product_Name： | 碲化铋(III) |
| CAS： | 1304-82-1 |
| 中文同义词： | 碲化铋 ; 碲化铋(III) ; 碲化铋棒 |
| EnglishSynonyms： | DIBISMUTH TRITELLURIDE ; BISMUTH(III) TELLURIDE ; BISMUTH SESQUITELLURIDE ; BISMUTH TELLURIDE |
| pro_mdlNumber： | MFCD00014201 |
| pro_acceptors： | 0 |
| pro_donors： | 0 |
| pro_smile： | [Te]=[Bi][Te][Bi]=[Te] |
| InChi： | InChI=1S/2Bi.3Te |
| InChiKey： | InChIKey=GUYIRKJSQUOSJV-UHFFFAOYSA-N |
property |
|
| MeltingPoint： | 585 DEG C(LIT)/573 °C |
| Density： | DENSITY: 7.642 G/ML AT 25 DEG C(LIT) |
| Comments： | APPLICATION: BI2TE3, ALONG WITH SB2TE3 AND OTHER STRUCTURALLY ANALOGOUS SEMICONDUCTORS, IS WIDELY REGARDED AS ONE OF THE BEST MATERIALS FOR ROOM-TEMPERATURE THERMOELECTRIC DEVICES. BISMUTH(III) TELLURIDE IS A KEY COMPONENT OF THERMOELECTRIC MATERIALS THAT HAVE REACHED ZT VALUES AS HIGH AS 2.4 AT ROOM TEMPERATURE ASSAY METHOD: TRACE METALS BASIS FORM: BEADS WGK: 3 |
secure_info |
|
| secure_symbol： |
GHS07
|
| secure_signal_word： | Warning |
| secure_risk_stmt： | H302 + H312 + H332-H315-H319-H335 |
| secure_cautionary_stmt： | P261-P280-P305 + P351 + P338 |
| secure_damage_code： | Xn |
| secure_risk_disclosure_stmt： | R:20/21/22-36/37/38 |
| secure_security_stmt： | S:26-36 |
| secure_wgk_germany： | 3 |
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