basic_info |
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| Product_Name： | 三乙基镓 |
| CAS： | 1115-99-7 |
| 中文同义词： | 三乙基镓 |
| EnglishSynonyms： | TEG ; ET3GA ; TEGA ; GALLIUM TRIETHYL ; TRIETHYLGALLIUM |
| pro_mdlNumber： | MFCD00015094 |
| pro_acceptors： | 0 |
| pro_donors： | 0 |
| pro_smile： | CC[Ga](CC)CC |
| InChi： | InChI=1S/3C2H5.Ga/c3*1-2;/h3*1H2,2H3; |
| InChiKey： | InChIKey=RGGPNXQUMRMPRA-UHFFFAOYSA-N |
property |
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| MeltingPoint： | -82 DEG C(LIT) |
| Boiling_Point： | 109 DEG C/300 MMHG(LIT) |
| Density： | DENSITY: 1.067 G/ML AT 25 DEG C |
| PhysicalProperty： | FLASHPOINT: 21 DEG C FLASHPOINT: 69.8 DEG F |
| Comments： | FORM: LIQUID FREQUENTLY ASKED QUESTIONS: LIVE CHAT AND FREQUENTLY ASKED QUESTIONS ARE AVAILABLE FOR THIS PRODUCT GENERAL DESCRIPTION: ATOMIC NUMBER OF BASE MATERIAL: 31 GALLIUM PROTOCOLS AND APPLICATIONS: HIGH PURITY METALORGANIC PRECURSORS FOR CPV DEVICE FABRICATION WGK: 3 |
secure_info |
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