基本信息 |
|
| 产品名称： | 锑化铟 |
| CAS： | 1312-41-0 |
| 中文同义词： | 锑化铟 |
| 英文同义词： | INDIUM ANTIMONIDE |
| MDL号： | MFCD00016146 |
| 氢键受体数量： | 0 |
| 氢键供体数量： | 0 |
| Smile： | [In]#[Sb] |
| InChi： | InChI=1S/In.Sb |
| InChiKey： | InChIKey=WPYVAWXEWQSOGY-UHFFFAOYSA-N |
性质 |
|
| 沸点： | DENSITY: 5.76 |
| 注解： | APPLICATION: CRYSTAL STRUCTURE: ZINC BLENDE STRUCTURE, CUBIC ASSAY METHOD: TRACE METALS BASIS FORM: CRYSTALS GENERAL DESCRIPTION: INSB IS A III-V SEMICONDUCTOR AND HAS A VERY NARROW BAND GAP (170 MEV) AND HIGH ELECTRON MOBILITIY, MAKING IT A MATERIAL OF INTEREST FOR HIGH-SPEED ELECTRONICS, PHOTOVOLTAIC APPLICATIONS, IR DETECTING DEVICES, THERMOELECTRICS, AND MAGNETORESISTIVE SENSORS WGK: 2 |
安全信息 |
|
| 符号： |
GHS07
GHS09
|
| 信号词： | Warning |
| 危险声明： | H302-H332-H411 |
| 警示性声明： | P273 |
| 危害码： | Xn,N |
| 风险声明： | R:20/22-51/53 |
| 安全声明： | S:61 |
| WGK德国： | 2 |
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