basic_info |
|
| Product_Name： | 四氟化硅 |
| CAS： | 7783-61-1 |
| 中文同义词： | 四氟化硅 |
| EnglishSynonyms： | SILICON(IV)FLUORIDE ; SILICIUM TETRAFLUORIDE ; TETRAFLUOROSILANE ; SILICON TETRAFLUORIDE |
| pro_mdlNumber： | MFCD00040533 |
| pro_acceptors： | 0 |
| pro_donors： | 0 |
| pro_smile： | F[Si](F)(F)F |
| InChi： | InChI=1S/F4Si/c1-5(2,3)4 |
| InChiKey： | InChIKey=ABTOQLMXBSRXSM-UHFFFAOYSA-N |
property |
|
| MeltingPoint： | -90 DEG C(LIT) |
| Boiling_Point： | -86 DEG C(LIT) |
| Density： | 3.57g/mLat25°C(lit.) |
| PhysicalProperty： | TRANSITION TEMPERATURE: CRITICAL TEMPERATURE -14.2 DEG C |
| Comments： | APPLICATION: SILICON TETRAFLUORIDE IS USED IN ION-IMPLANTATION PROCESSES AND AS A PRECURSOR TO FLUORINATED SILICA VIA PLASMA-ASSISTED CVD. MIXTURES OF SIF4-SIH4-H2 HAVE RECENTLY BEEN USED TO DEPOSIT POLYCRYSTALLINE SILICON THIN FILMS VIA REMOTE PLASMA CHEMICAL VAPOR DEPOSITION (RPCVD) SUCH FLUORINATED THIN FILMS SHOW VISIBLE PHOTOLUMINESCENCE (PL) AT ROOM TEMPERATURE IMPURITIES: <0.5 PPM CARBON MONOXIDE (CO) IMPURITIES: <1 PPM ARGON AND OXYGEN (AR AND O2) IMPURITIES: <1 PPM CARBON DIOXIDE (CO2) IMPURITIES: <10 PPM METHANE (CH4) IMPURITIES: <3 PPM NITROGEN (N2) IMPURITIES: <50 PPM HYDROGEN FLUORIDE (HF) RECOMMENDED PRODUCTS: MONEL CONTROL VALVES Z261793, Z261807 OR MONEL GAS REGULATORS Z405981, Z406007 ARE RECOMMENDED RIDADR: UN 1859 2.3 RTECS: VW2327000 UNSPSC: 12142100 WGK: 3 |
| Specification： | ELECTRONIC GRADE |
secure_info |
|
| secure_symbol： |
GHS05
GHS06
|
| secure_signal_word： | Danger |
| secure_risk_stmt： | H300 +H310 + H330-H314 |
| secure_cautionary_stmt： | P260-P264-P280-P284-P301 + P310-P302 + P350 |
| secure_damage_code： | T+ |
| secure_risk_disclosure_stmt： | R:14-26/27/28-31-34 |
| secure_security_stmt： | S:23-26-36/37/39-45 |
| secure_wgk_germany： | 3 |
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