basic_info |
|
| Product_Name： | 电子级乙硅烷 |
| CAS： | 1590-87-0 |
| 中文同义词： | 乙硅烷 ; 电子级乙硅烷 |
| EnglishSynonyms： | DISILANE |
| pro_mdlNumber： | MFCD00054678 |
| pro_acceptors： | 0 |
| pro_donors： | 0 |
| pro_smile： | [SiH3][SiH3] |
| InChi： | InChI=1S/H6Si2/c1-2/h1-2H3 |
| InChiKey： | InChIKey=PZPGRFITIJYNEJ-UHFFFAOYSA-N |
property |
|
| MeltingPoint： | -132.6 DEG C(LIT) |
| Boiling_Point： | -14.5 DEG C(LIT) |
| PhysicalProperty： | FLASHPOINT: <10 DEG C FLASHPOINT: <50 DEG F TRANSITION TEMPERATURE: CRITICAL TEMPERATURE 150.9 DEG C |
| Comments： | APPLICATION: PRECURSOR FOR THE RAPID, LOW TEMPERATURE DEPOSITION OF EPITAXIAL SILICON AND SILICON-BASED DIELECTRICS FEATURES AND BENEFITS: DISILANE IS USED FOR THE DEPOSITION OF AMORPHOUS SILICON, EPITAXIAL SILICON AND SILICON BASED DIELECTRICS VIA RAPID LOW-TEMPERATURE CHEMICAL VAPOR DEPSITION (LTCVD). DISILANE IS ALSO USED IN THE EPITAXIAL GROWTH OF SIGE FILMS BY MOLECULAR BEAM EPITAXY (MBE) IN CONJUNCTION WITH SOLID SOURCES OF GERMANIUM. PRECURSOR FOR THE RAPID, LOW TEMPERATURE DEPOSITION OF EPITAXIAL SILICON AND SILICON-BASED DIELECTRICS FORM: GAS GENERAL DESCRIPTION: ATOMIC NUMBER OF BASE MATERIAL: 14 SILICON IMPURITIES: <0.2 PPM CHLOROSILANES IMPURITIES: <1 PPM ARGON (AR) AND OXYGEN (O2) IMPURITIES: <1 PPM CARBON DIOXIDE (CO2) IMPURITIES: <1 PPM NITROGEN (N2) IMPURITIES: <1 PPM THC IMPURITIES: <1 PPM WATER IMPURITIES: <5 PPM SILOXANES IMPURITIES: RECOMMENDED PRODUCTS: STAINLESS STEEL REGULATORS Z527416 OR Z527424 ARE RECOMMENDED RIDADR: UN 3161 2.1 UNSPSC: 12142100 WGK: 3 |
| Specification： | ELECTRONIC GRADE |
secure_info |
|
| secure_symbol： |
GHS02
GHS04
GHS07
GHS08
|
| secure_signal_word： | Danger |
| secure_risk_stmt： | H220-H280-H312-H315-H319-H332-H334-H335 |
| secure_cautionary_stmt： | P210-P261-P280-P305 + P351 + P338-P342 + P311-P410 + P403 |
| secure_damage_code： | F,Xn |
| secure_risk_disclosure_stmt： | R:17-20/21-36/37/38-42 |
| secure_security_stmt： | S:16-24-26-36/37/39 |
| secure_wgk_germany： | 3 |
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