基本信息 |
|
| 产品名称： | 金属硅 |
| CAS： | 16919-19-0 ;7440-21-3 |
| 中文同义词： | 硅同位素标准物质 ; 硅粉 ; 硅标准溶液 ; 硅微粉 ; 金属硅 ; 纳米硅粉 |
| 英文同义词： | AQUANAL(TM)-PLUS SILICON ; SILICON SINGLE ELEMENT STANDARD ; SIMP AX05 ; SILICON ICP STANDARD ; SILICON SINGLE CRYSTAL CZ GROWN P TYPE, DOPANT P ; SILICON SINGLE CRYSTAL NTD N TYPE, CZ-N ; POLYDISPERSED SILICON ; LOW ENERGY ARSENIC IMPLANTED SILICON ; SILICON STANDARD ; SILICON ; SILICON SINGLE CRYSTAL NTD N TYPE, FZ-P ; SIMP AX10 ; SILICON IN HYDROCARBON OIL ; NANODE-40 ; SILICON RESISTIVITY F ; SILICON RESISTIVITY B ; SILICON SINGLE CRYSTAL CZ GROWN P TYPE, DOPANT AS ; SILICON METAL ; SILICON AA SINGLE ELEMENT STANDARD ; SILICON, OIL BASED STANDARD ; SILICON ATOMIC ABSORPTION STANDARD ; SIMP AX20 ; NANOFET ; SILICON IN XYLENE ; A-SI ; SILICON SINGLE ELEMENT PLASMA STANDARD ; SILICON ICP/DCP STANDARD ; NANOFET-PIP ; SILICON RESISTIVITY A ; SILICON SINGLE CRYSTAL NTD N TYPE, CZ-P ; SILICON AA STANDARD ; SILICON POWDER ; SILICON RESISTIVITY E ; SILICON AA/ICP CALIBRATION/CHECK STANDARD ; SILICON STANDARD ; CERTIFIED REFERENCE MATERIAI FOR SILICON ISOTOPE ; SILICON RESISTIVITY C ; MONODISPERSED SILICON ; SILICON PLASMA STANDARD |
| MDL号： | MFCD00085311 |
| 氢键受体数量： | 0 |
| 氢键供体数量： | 0 |
| Smile： | [Si] |
| InChi： | InChI=1S/Si |
| InChiKey： | InChIKey=XUIMIQQOPSSXEZ-UHFFFAOYSA-N |
性质 |
|
| 熔点： | 1410 DEG C(LIT)/1410℃/1410℃/1410℃/1410℃ |
| 沸点： | 2355 DEG C(LIT)/2355℃/2355℃/2355℃/2355℃ |
| 密度： | 2.33g/mLat25°C(lit.) |
| 注解： | APPLICATION: SPUTTERING IS A PROCESS WHEREBY ATOMS ARE EJECTED FROM A SOLID TARGET MATERIAL DUE TO BOMBARDMENT OF THE TARGET BY ENERGETIC PARTICLES. THE EXTREME MINIATURIZATION OF COMPONENTS IN THE SEMICONDUCTOR AND ELECTRONICS INDUSTRY REQUIRES HIGH PURITY SPUTTERING TARGETS FOR THIN FILM DEPOSITION ASSAY METHOD: TRACE METALS BASIS DIAMETER X THICKNESS: 2.00 IN. X 0.25 IN |
安全信息 |
|
| 符号： |
GHS02
|
| 信号词： | Warning |
| 危险声明： | H228 |
| 警示性声明： | P210 |
| 危害码： | F |
| 风险声明： | R:11 |
| 安全声明： | S:S16;S33;S36 |
| UN代码： | 1346 |
| WGK德国： | 2 |
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