basic_info |
|
| Product_Name： | 五(二甲氨基)钽(V) |
| CAS： | 19824-59-0 |
| 中文同义词： | 五(二甲氨基)钽(V) |
| EnglishSynonyms： | PDMAT ; PENTAKIS(DIMETHYLAMINO)TANTALUM ; TADMA ; TA(NME2)5 ; TANTALUM PENTAKIS(DIMETHYLAMIDE) ; PENTAKIS(DIMETHYLAMINO)TANTALUM(V) ; TANTALUM DIMETHYLAMIDE |
| pro_mdlNumber： | MFCD01631286 |
| pro_acceptors： | 5 |
| pro_donors： | 0 |
| pro_smile： | CN(C)[Ta](N(C)C)(N(C)C)(N(C)C)N(C)C |
| InChi： | InChI=1S/5C2H6N.Ta/c5*1-3-2;/h5*1-2H3;/q5*-1;+5 |
| InChiKey： | InChIKey=VSLPMIMVDUOYFW-UHFFFAOYSA-N |
property |
|
| MeltingPoint： | 100 DEG C (DEC)(LIT) |
| Boiling_Point： | SUBL 100 DEG C/0.1MM |
| Comments： | FEATURES AND BENEFITS: VOLATILE SOLID CVD PRECURSOR TO TANTALUM NITRIDE (TAN) THIN FILMS. ALSO YIELDS TANTALUM OXIDE (TA2O5) THIN FILMS WHEN O2, H2O, NO OR H2O2 IS PRESENT DURING THE DEPOSITION PROCESS.TA2O5 THINS FILMS SHOW PROMISE AS GATE DIELECTRIC MATERIALS IN THE MANUFACTURE OF INTEGRATED CIRCUITS FORM: SOLID GENERAL DESCRIPTION: ATOMIC NUMBER OF BASE MATERIAL: 73 TANTALUM RIDADR: UN 3131 4.3/PG 1 UNSPSC: 12352103 WGK: 3 |
secure_info |
|
| secure_symbol： |
GHS02
GHS05
|
| secure_signal_word： | Danger |
| secure_risk_stmt： | H260-H314 |
| secure_cautionary_stmt： | P223-P231 + P232-P280-P305 + P351 + P338-P370 + P378-P422 |
| secure_damage_code： | F,C |
| secure_risk_disclosure_stmt： | R:11-14/15-34 |
| secure_security_stmt： | S:16-26-36/37/39-43-45 |
| secure_wgk_germany： | 3 |
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