基本信息 |
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| 产品名称： | 四(二乙氨基)铪 |
| CAS： | 19962-11-9 ;19782-68-4 |
| 中文同义词： | 四（二甲氨基）铪 ; 四(二乙氨基)铪 |
| 英文同义词： | TETRAKIS(DIMETHYLAMIDO)HAFNIUM ; ETRAKIS(DIMETHYLAMIDO)HAFNIUM(IV) ; TETRAKIS(DIMETHYLAMIDO)HAFNIUM(IV) ; HAFNIUM DIMETHYLAMIDE ; TDMAH ; TETRAKIS(DIMETHYLAMINO)HAFNIUM(IV) ; TETRAKIS(DIMETHYLAMINO)HAFNIUM |
| MDL号： | MFCD01862473 |
| 氢键受体数量： | 4 |
| 氢键供体数量： | 0 |
| Smile： | CN(C)[Hf](N(C)C)(N(C)C)N(C)C |
| InChi： | InChI=1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4 |
| InChiKey： | InChIKey=ZYLGGWPMIDHSEZ-UHFFFAOYSA-N |
性质 |
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| 熔点： | 26-29 DEG C(LIT) |
| 沸点： | 85 DEG C/0.1MM |
| 密度： | DENSITY: 1.098 G/ML AT 25 DEG C |
| 物理性质： | FLASHPOINT: 109.4 DEG F FLASHPOINT: 43 DEG C |
| 注解： | APPLICATION: PRECURSOR TO HFO2 BY ATOMIC LAYER DEPOSITION WITH WATER FORM: LOW-MELTING SOLID FREQUENTLY ASKED QUESTIONS: LIVE CHAT AND FREQUENTLY ASKED QUESTIONS ARE AVAILABLE FOR THIS PRODUCT GENERAL DESCRIPTION: ATOMIC NUMBER OF BASE MATERIAL: 72 HAFNIUM PROTOCOLS AND APPLICATIONS: PRECURSORS PACKAGED FOR DEPOSITIONS SYSTEMS RIDADR: UN 3396 4.3/PG 2 UNSPSC: 12352103 WGK: 3 |
安全信息 |
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