basic_info |
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| Product_Name： | 四(二乙氨基)铪 |
| CAS： | 19782-68-4 ;19962-11-9 |
| 中文同义词： | 四(二乙氨基)铪 ; 四（二甲氨基）铪 |
| EnglishSynonyms： | TDMAH ; TETRAKIS(DIMETHYLAMIDO)HAFNIUM ; HAFNIUM DIMETHYLAMIDE ; ETRAKIS(DIMETHYLAMIDO)HAFNIUM(IV) ; TETRAKIS(DIMETHYLAMIDO)HAFNIUM(IV) ; TETRAKIS(DIMETHYLAMINO)HAFNIUM ; TETRAKIS(DIMETHYLAMINO)HAFNIUM(IV) |
| pro_mdlNumber： | MFCD01862473 |
| pro_acceptors： | 4 |
| pro_donors： | 0 |
| pro_smile： | CN(C)[Hf](N(C)C)(N(C)C)N(C)C |
| InChi： | InChI=1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4 |
| InChiKey： | InChIKey=ZYLGGWPMIDHSEZ-UHFFFAOYSA-N |
property |
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| MeltingPoint： | 26-29 DEG C(LIT) |
| Boiling_Point： | 85 DEG C/0.1MM |
| Density： | DENSITY: 1.098 G/ML AT 25 DEG C |
| PhysicalProperty： | FLASHPOINT: 109.4 DEG F FLASHPOINT: 43 DEG C |
| Comments： | APPLICATION: PRECURSOR TO HFO2 BY ATOMIC LAYER DEPOSITION WITH WATER FORM: LOW-MELTING SOLID FREQUENTLY ASKED QUESTIONS: LIVE CHAT AND FREQUENTLY ASKED QUESTIONS ARE AVAILABLE FOR THIS PRODUCT GENERAL DESCRIPTION: ATOMIC NUMBER OF BASE MATERIAL: 72 HAFNIUM PROTOCOLS AND APPLICATIONS: PRECURSORS PACKAGED FOR DEPOSITIONS SYSTEMS RIDADR: UN 3396 4.3/PG 2 UNSPSC: 12352103 WGK: 3 |
secure_info |
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