CHROMIUM ETCHANT_ChemCD

CHROMIUM ETCHANT

basic_info
Product_Name：	CHROMIUM ETCHANT
EnglishSynonyms：	CHROMIUM ETCHANT
pro_mdlNumber：	MFCD07370678
pro_acceptors：	0
pro_donors：	0
InChi：	InChI=1S//
InChiKey：	InChIKey=MOSFIJXAXDLOML-UHFFFAOYSA-N
property
Boiling_Point：	100 DEG C/1 ATM
Density：	DENSITY: 1.16 G/ML AT 25 DEG C
Comments：	APPLICATION: ETCHES AL, CR, CU, NI, GAAS. SURFACE OXIDIZES SI, TA/TAN. NO ATTACK ON AU, SI3N4, SIO, TI, AND W SURFACES APPLICATION: FOR USE AT ROOM TEMPERATURE OR ELEVATED TEMPERATURE. ETCHES CLEANLY, ELIMINATING NEED FOR AN INTERMEDIATE RINSE. ETCHING TEMPERATURE VARIES WITH REGARD TO FILM THICKNESS. ETCH TIMES RANGE FROM 15 TO 60 SECONDS AT ROOM TEMPERATURE. NOTE, CHROMIUM ETCHANTS SHOULD BE HANDLED IN A WELL VENTILATED HOOD COLOR: ORANGE COMPOSITION: VOLATILES, 85% FEATURES AND BENEFITS: DESIGNED FOR PRECISE, CLEAN ETCHING OF CHROMIUM AND CHROMIUM OXIDE FILMS. COMPATIBLE WITH BOTH POSITIVE AND NEGATIVE PHOTORESISTS. FILTERED TO 0.2 MICRON TO REMOVE PARTICLULATES GENERAL DESCRIPTION: CERIC AMMONIUM NITRATE-BASED ETCHANT. ETCH RATE OF 40 ANGSTROM/SEC AT ROOM TEMP. ETCHES CLEANLY WITH ONLY A DEIONIZED WATER RINSE NEEDED RIDADR: UN 3093 8/PG 2 STANDARD UNSPSC: 12352300 WGK: 3
secure_info

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